氧化物双介质层忆阻器的设计及应用

游钧淇, 李策, 杨栋梁, 孙林锋

Double Dielectric Layer Metal-oxide Memristor: Design and Applications

YOU Junqi, LI Ce, YANG Dongliang, SUN Linfeng

图1 氧化物双介质层忆阻器与氧化物单介质层忆阻器的结构和性能对比

Fig. 1 Comparison of the structure and performance between the single/double dielectric layer metal-oxide memristor (a, d) Schematic diagrams for (a) single and (d) double dielectric layer metal-oxide memristors; (b, e) Comparison of I-V curves between (b) ZrO2-based memristor and (e) Ta2O5/ZrO2-based memristor with bi-layer structure exhibiting more uniform switching voltage[17]; (c, f) Comparison of the endurance between (c) HfO2-based memristor and (f) HfO2:Al/HfO2-based memristor with double dielectric layer exhibiting better cycling endurance[18]