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氧化物双介质层忆阻器的设计及应用
游钧淇1(), 李策1, 杨栋梁1, 孙林锋1,2()
Double Dielectric Layer Metal-oxide Memristor: Design and Applications
YOU Junqi1(), LI Ce1, YANG Dongliang1, SUN Linfeng1,2()

图1. 氧化物双介质层忆阻器与氧化物单介质层忆阻器的结构和性能对比

Fig. 1. Comparison of the structure and performance between the single/double dielectric layer metal-oxide memristor
(a, d) Schematic diagrams for (a) single and (d) double dielectric layer metal-oxide memristors; (b, e) Comparison of I-V curves between (b) ZrO2-based memristor and (e) Ta2O5/ZrO2-based memristor with bi-layer structure exhibiting more uniform switching voltage[17]; (c, f) Comparison of the endurance between (c) HfO2-based memristor and (f) HfO2:Al/HfO2-based memristor with double dielectric layer exhibiting better cycling endurance[18]