氧化物双介质层忆阻器的设计及应用
游钧淇, 李策, 杨栋梁, 孙林锋

Double Dielectric Layer Metal-oxide Memristor: Design and Applications
YOU Junqi, LI Ce, YANG Dongliang, SUN Linfeng
表1 氧化物单介质层忆阻器与氧化物双介质层忆阻器性能参数对比
Table 1 Performance comparison of the single/double dielectric layer metal-oxide memristors
Memristor structure Range of Set voltage, ΔVSet/V Range of Reset voltage,
ΔVReset/V		 Endurance On/Off ratio Retention/s Ref.
Single dielectric layer Ta/ZrO2/TiN -1.0 ~-1.6
(0.6)		 0.8 ~ 1.5
(0.7)		 100 102 - [15]
Cu/Al2O3/Pt 0.4 ~ 1.2
(0.8)		 -0.1 ~-0.8
(0.7)		 2×103 105 105 [19]
Ag/ZnO/Pt 0.3 ~ 1.0
(0.7)		 -0.4 ~-0.8
(0.4)		 102 50 104 [20]
TaN/Ta2O5/Pt 2.0 ~ 4.5
(2.5)		 -2.5 ~-4.5
(2)		 104 - 104 [21]
Ta/ZrO2/Pt 0.4 ~ 2.0
(1.6)		 -0.4 ~-1.0
(0.6)		 100 - - [22]
Double dielectric layer Ag/SiO2/Ta2O5/Pt 0.14 ~ 0.24
(0.1)		 -0.06 ~-0.14
(0.08)		 103 103 104 [14]
Ta/ZrO2/ZTO/TiN -0.8 ~-1.2
(0.4)		 0.8 ~ 1.2
(0.4)		 105 102 3×103 [15]
Ta/Ta2O5/ZrO2/Pt 0.7 ~ 1.2
(0.5)		 -0.5 ~-0.8
(0.3)		 106 102 104 [17]
TaN/Ta2O5/WO3/Pt 1.6 ~ 2.3
(0.7)		 -1.9 ~-2.5
(0.6)		 109 - 106 [21]
Ti/HfO2/TiOx/Pt -0.8 ~-1.1
(0.3)		 1.4 ~ 1.5
(0.1)		 107 103 105 [23]