光电人工突触研究进展

杜剑宇, 葛琛

Recent Progress in Optoelectronic Artificial Synapse Devices

DU Jianyu, GE Chen

图5 基于光与铁电材料相互作用的研究工作[50]

Fig. 5 Research based on the interaction between light and ferroelectric materials[50] (a) Schematic illustration of optoelectronic synapses based on MoS2/ BaTiO3; (b) Non-volatile multi-level conductance switching under optical excitation and electrical excitation; (c) Summary of the On/Off ratio and retention time for various optoelectronic synapses reported previously; (d) PFM phase diagrams of the MoS2/ BaTiO3 heterostructure as a function of the light exposure time; (e) Preprocess of the image noise reduction utilizing the sensor array; (f) Comparisons of the recognition accuracy of the pre-prepared images