图4. 基于光与铁电材料相互作用的研究工作

Fig. 4. Research based on the interaction between light and ferroelectric materials
(a) PFM phase-maps (30 μm×30 μm) of BaTiO₃ film, with P_DOWN and P_UP regions being written by applying voltage to the tip of −8 or +8 V, respectively, but after illumination (blue laser, 10 min) P_UP domains being switched back; (b) Low-resistance state (LRS) to high-resistance state (HRS) switching promoted by optically induced polarization reversal^[44]; (c) Sketch of the experiment geometry; (d) PFM phase images acquired in the dark before and after UV illumination, showing the MoS₂ flake boundary by the dashed lines^[43]; (e) Schematic configuration of the device and the mechanism behind the optically and electrically tunable channel conductance; (f) Long-term optical potentiation and electrical depression in the WS₂/ PZT optoelectronic synapses^[45]