光电人工突触研究进展

杜剑宇, 葛琛

Recent Progress in Optoelectronic Artificial Synapse Devices

DU Jianyu, GE Chen

图4 基于光与铁电材料相互作用的研究工作

Fig. 4 Research based on the interaction between light and ferroelectric materials (a) PFM phase-maps (30 μm×30 μm) of BaTiO3 film, with PDOWN and PUP regions being written by applying voltage to the tip of −8 or +8 V, respectively, but after illumination (blue laser, 10 min) PUP domains being switched back; (b) Low-resistance state (LRS) to high-resistance state (HRS) switching promoted by optically induced polarization reversal[44]; (c) Sketch of the experiment geometry; (d) PFM phase images acquired in the dark before and after UV illumination, showing the MoS2 flake boundary by the dashed lines[43]; (e) Schematic configuration of the device and the mechanism behind the optically and electrically tunable channel conductance; (f) Long-term optical potentiation and electrical depression in the WS2/ PZT optoelectronic synapses[45]