光电人工突触研究进展
杜剑宇, 葛琛

Recent Progress in Optoelectronic Artificial Synapse Devices
DU Jianyu, GE Chen
图2 基于光生载流子的捕获和释放机理的研究工作
Fig. 2 Research based on operation mechanism of trapping/detrapping of photogenerated carriers
(a) Schematic of emulating a biological synapse by using a synaptic transistor based on the hybrid structure of Si NM and MAPbI3; (b) EPSC of a synaptic transistor triggered by an optical spike; (c) Dependence of the PPF index (defined as A2/A1) on Δt; (d) Dependence of the maximum EPSC triggered by 30 optical spikes on the backgate voltage; (e) EPSC triggered by 30 optical spikes at various backgate voltages[22]; (f) Schematic illustration of the CsPbBr3 quantum dots-based synapse devices; (g) Schematic energy diagram of the device during light programming operation and during electrical erasing operation under dark condition; (h) Transient characteristic of the synaptic device after light programming operation with fixed light intensity and wavelength varied from 365 to 660 nm; (i) Long-term potentiation (bottom panel) and long-term depressing (top panel) of the CsPbBr3 quantum dots-based synapse devices under different light illumination[25]