光电人工突触研究进展

杜剑宇, 葛琛

Recent Progress in Optoelectronic Artificial Synapse Devices

DU Jianyu, GE Chen

图1 关于氧空位电离和解离机理的研究工作

Fig. 1 Research based on the operation mechanism of ionization and dissociation of oxygen vacancy (a) Device structure, optical microscope image of an IGZO-based photonic neuromorphic device; (b) Current decaying characteristics of IGZO, ISO, ISZO, and IZO films (from top to bottom) after pulsed UV exposure; (c) Relationship between the activation energy and the relaxation time constant for various amorphous oxide semiconductors; (d) Typical photoinduced current generation and decaying characteristics of IGZO semiconductor upon UV-light exposure[21]; (e) Artificial neuromorphic system for eyesight simulation based on SnOx/IGZO; (f) Current variation and decay of IGZO, SnOx/IGZO devices after 450 nm-light pulse stimulus; (g) Schematic process of the selective memory for the moth and dragonfly image with the time (left panel), and the selective amnesia and memory processes achieved by utilizing 9 positive and negative VGS pulses[20]