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GaN单晶的HVPE生长与掺杂进展
齐占国1(), 刘磊1, 王守志1(), 王国栋1, 俞娇仙2, 王忠新1, 段秀兰1, 徐现刚1, 张雷1()
Progress in GaN Single Crystals: HVPE Growth and Doping
QI Zhanguo1(), LIU Lei1, WANG Shouzhi1(), WANG Guogong1, YU Jiaoxian2, WANG Zhongxin1, DUAN Xiulan1, XU Xiangang1, ZHANG Lei1()

图8. Fe掺杂GaN

Fig. 8. Fe-doped GaN
(a) Resistivity as a function of reciprocal temperature for samples doped with Mn, C, and Fe[8]; (b) Formation energy versus Fermi level for FeGa, FeN and Fei in GaN in different charge states, under Ga-rich conditions[68]; (c) Carrier concentration and Hall mobility versus Fe concentration in GaN films co-doped with Si and Fe[70]; (d) Resistivity versus inverse temperature for samples doped with Fe at various Fe concentrations[63]; (e) Schematic diagram of the energy levels and carrier decay processes of Fe-doped GaN[71]; (f) Carrier trapping time for Fe-doped GaN bulk crystals[72]