[an error occurred while processing this directive]
GaN单晶的HVPE生长与掺杂进展
齐占国1(), 刘磊1, 王守志1(), 王国栋1, 俞娇仙2, 王忠新1, 段秀兰1, 徐现刚1, 张雷1()
Progress in GaN Single Crystals: HVPE Growth and Doping
QI Zhanguo1(), LIU Lei1, WANG Shouzhi1(), WANG Guogong1, YU Jiaoxian2, WANG Zhongxin1, DUAN Xiulan1, XU Xiangang1, ZHANG Lei1()

图6. Mg掺杂HVPE-GaN

Fig. 6. Mg-doped HVPE-Ga
(a) Schematic of the HVPE system for growth of Mg doped GaN using MgO[53]; (b) Hole concentration measured at room temperature as a function of Mg concentration[55]; (c) Compensating donor concentration (Nd) and acceptor concentration (Na) as a function of Mg concentration[55]