GaN单晶的HVPE生长与掺杂进展

齐占国, 刘磊, 王守志, 王国栋, 俞娇仙, 王忠新, 段秀兰, 徐现刚, 张雷

Progress in GaN Single Crystals: HVPE Growth and Doping

QI Zhanguo, LIU Lei, WANG Shouzhi, WANG Guogong, YU Jiaoxian, WANG Zhongxin, DUAN Xiulan, XU Xiangang, ZHANG Lei

图4 Si掺杂HVPE-GaN[38]

Fig. 4 Si-doped HVPE-GaN[38] (a) Structure of Si-doped HVPE-GaN reactor; (b) Image of 800 μm- thick Si-doped HVPE-GaN; (c) Distribution of free carrier concentration along the diameter of Si-doped HVPE-GaN