GaN单晶的HVPE生长与掺杂进展

齐占国, 刘磊, 王守志, 王国栋, 俞娇仙, 王忠新, 段秀兰, 徐现刚, 张雷

Progress in GaN Single Crystals: HVPE Growth and Doping

QI Zhanguo, LIU Lei, WANG Shouzhi, WANG Guogong, YU Jiaoxian, WANG Zhongxin, DUAN Xiulan, XU Xiangang, ZHANG Lei

图3 HVPE生长的GaN晶体照片及质量表征

Fig. 3 Photos and characterization of GaN crystals grown by HVPE (a) 2-inch 2.5 mm thick GaN crystal; (b) (0002) surface high-resolution XRD pattern; (c) (10¯12) high-resolution XRD pattern; (d) Image of GaN wafers; (e) CL image (dislocation density ~5×106 cm-2); (f) AFM image (RMS<0.2 nm in the range of 10 μm×10 μm)