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GaN单晶的HVPE生长与掺杂进展
齐占国1(), 刘磊1, 王守志1(), 王国栋1, 俞娇仙2, 王忠新1, 段秀兰1, 徐现刚1, 张雷1()
Progress in GaN Single Crystals: HVPE Growth and Doping
QI Zhanguo1(), LIU Lei1, WANG Shouzhi1(), WANG Guogong1, YU Jiaoxian2, WANG Zhongxin1, DUAN Xiulan1, XU Xiangang1, ZHANG Lei1()

图9. C掺杂GaN

Fig. 9. C-doped GaN
(a) Formation energy versus Fermi level for CGa and CN in GaN: Ga-rich conditions (left), and N-rich conditions (right)[79]; (b) CN impurity model in GaN[79]; (c) Optical transitions of CN in GaN[79]; (d) Defect density as a function of C concentration[81]; (e) Temperature-dependent resistivity for C doped GaN[82] ; (f) Concentrations of carbon, oxygen, and silicon in C-doped GaN layers versus the input mole fraction of pentane[82]