新型GaN与ZnO衬底ScAlMgO4晶体的研究进展
张超逸1(
), 唐慧丽1(), 李宪珂1, 王庆国1, 罗平1, 吴锋1, 张晨波1, 薛艳艳1, 徐军1(), 韩建峰2, 逯占文2
), 唐慧丽1(), 李宪珂1, 王庆国1, 罗平1, 吴锋1, 张晨波1, 薛艳艳1, 徐军1(), 韩建峰2, 逯占文2
Research Progress of ScAlMgO4 Crystal: a Novel GaN and ZnO Substrate
ZHANG Chaoyi1(), TANG Huili1(), LI Xianke1, WANG Qingguo1, LUO Ping1, WU Feng1, ZHANG Chenbo1, XUE Yanyan1, XU Jun1(), HAN Jianfeng2, LU Zhanwen2
), TANG Huili1(), LI Xianke1, WANG Qingguo1, LUO Ping1, WU Feng1, ZHANG Chenbo1, XUE Yanyan1, XU Jun1(), HAN Jianfeng2, LU Zhanwen2
图15. 采用激光分子束外延技术在SCAM衬底上外延生长ZnO薄膜[
Fig. 15. ZnO films grown by laser-MBE on SCAM substrate[
(a) Schematic illustration of the crystal structure of SCAM consisting of alternating layers of wurtzite AlMgO2.5 (0001) and rock salt ScO1.5 (111) layers; During epitaxy of ZnO, the wurtzite layer of SCAM is interconnected with the wurtzite layer of ZnO; (b, c) In-plane twisting (Δφ) and out-of-plane tilting (Δω) of epitaxial ZnO films on SCAM and sapphire substrates as a function of growth temperature; 1 Å=0.1 nm
