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新型GaN与ZnO衬底ScAlMgO4晶体的研究进展
张超逸1(), 唐慧丽1(), 李宪珂1, 王庆国1, 罗平1, 吴锋1, 张晨波1, 薛艳艳1, 徐军1(), 韩建峰2, 逯占文2
Research Progress of ScAlMgO4 Crystal: a Novel GaN and ZnO Substrate
ZHANG Chaoyi1(), TANG Huili1(), LI Xianke1, WANG Qingguo1, LUO Ping1, WU Feng1, ZHANG Chenbo1, XUE Yanyan1, XU Jun1(), HAN Jianfeng2, LU Zhanwen2

图13. 不同气氛下退火的SCAM衬底上生长的GaN外延薄膜[86]

Fig. 13. GaN epitaxial films grown on SCAM substrate annealed under different atmospheres[86]
(a, b) RHEED patterns for as-grown GaN epitaxial films on SCAM annealed in (a) hydrogen and (b) ambient atmosphere. (c, d) SEM images for as-grown GaN epitaxial films on SCAM annealed in (c) hydrogen and (d) ambient atmosphere; (e, f) Surfaces of GaN epitaxial films after molten KOH etching for (c) and (d), respectively; (g, h) Schematic structures of SCAM annealed in (g) hydrogen and (h) ambient atmosphere; (i, j) HAADF-STEM images and schematic illustrations of (i) Ga-polarity and (j) N-polarity GaN, where the bright spots in the HAADF images indicates Ga atoms and the dark ones indicates N atoms with insets showing the simulated micrograph