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新型GaN与ZnO衬底ScAlMgO4晶体的研究进展
张超逸1(), 唐慧丽1(), 李宪珂1, 王庆国1, 罗平1, 吴锋1, 张晨波1, 薛艳艳1, 徐军1(), 韩建峰2, 逯占文2
Research Progress of ScAlMgO4 Crystal: a Novel GaN and ZnO Substrate
ZHANG Chaoyi1(), TANG Huili1(), LI Xianke1, WANG Qingguo1, LUO Ping1, WU Feng1, ZHANG Chenbo1, XUE Yanyan1, XU Jun1(), HAN Jianfeng2, LU Zhanwen2

图8. 提拉法生长各种直径的SCAM单晶[48]

Fig. 8. SCAM single crystal with various diameters grown by Cz method[48]
10 mm-3.5 inch; 1 inch=25.4 mm