新型GaN与ZnO衬底ScAlMgO4晶体的研究进展
张超逸1(
), 唐慧丽1(), 李宪珂1, 王庆国1, 罗平1, 吴锋1, 张晨波1, 薛艳艳1, 徐军1(), 韩建峰2, 逯占文2
), 唐慧丽1(), 李宪珂1, 王庆国1, 罗平1, 吴锋1, 张晨波1, 薛艳艳1, 徐军1(), 韩建峰2, 逯占文2
Research Progress of ScAlMgO4 Crystal: a Novel GaN and ZnO Substrate
ZHANG Chaoyi1(), TANG Huili1(), LI Xianke1, WANG Qingguo1, LUO Ping1, WU Feng1, ZHANG Chenbo1, XUE Yanyan1, XU Jun1(), HAN Jianfeng2, LU Zhanwen2
), TANG Huili1(), LI Xianke1, WANG Qingguo1, LUO Ping1, WU Feng1, ZHANG Chenbo1, XUE Yanyan1, XU Jun1(), HAN Jianfeng2, LU Zhanwen2
图7. 提拉法生长SCAM单晶[
Fig. 7. SCAM single crystal grown by Cz method[
(a) SCAM single crystal with the dimension of ϕ30 mm×59 mm grown by Cz method; (b) Interference photograph of (0001) SCAM wafer under the polarizing microscopy
