MoS2/g-C3N4 S型异质结的构建及光催化性能研究
马润东1,2(
), 郭雄1,2, 施凯旋1,2, 安胜利1,2, 王瑞芬1,2(), 郭瑞华1,2
), 郭雄1,2, 施凯旋1,2, 安胜利1,2, 王瑞芬1,2(), 郭瑞华1,2
S-type Heterojunction of MOS2/g-C3N4: Construction and Photocatalysis
MA Rundong1,2(), GUO Xiong1,2, SHI Kaixuan1,2, AN Shengli1,2, WANG Ruifen1,2(), GUO Ruihua1,2
), GUO Xiong1,2, SHI Kaixuan1,2, AN Shengli1,2, WANG Ruifen1,2(), GUO Ruihua1,2
图5. (a) 异质结能带图, (b) 样品异质结的构建及能费米能级的弯曲, (c) 内建电场引起的能带弯曲图
Fig. 5. Energy bands diagram of heterojunction (a), construction of heterojunction of sample and bending of Fermi energy level (b), and diagram of energy band bending caused by built-in electric field (c)
