熵调控抑制ZrNiSn基half-Heusler热电材料的晶格热导率
Inhibition of Lattice Thermal Conductivity of ZrNiSn-based Half-Heusler Thermoelectric Materials by Entropy Adjustment
熵调控抑制ZrNiSn基half-Heusler热电材料的晶格热导率 |
| 王鹏将, 康慧君, 杨雄, 刘颖, 程成, 王同敏 |
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Inhibition of Lattice Thermal Conductivity of ZrNiSn-based Half-Heusler Thermoelectric Materials by Entropy Adjustment |
| WANG Pengjiang, KANG Huijun, YANG Xiong, LIU Ying, CHENG Cheng, WANG Tongmin |
| 图4 ZrNiSn和Zr0.5Hf0.5Ni1-xPtxSn试样的(a)电导率与温度的变化关系, (b)室温载流子浓度和迁移率与Pt掺杂量的变化关系, (c)Seebeck系数和(d)功率因子与温度的变化关系 |
| Fig. 4 (a) Temperature dependence of electrical conductivity, (b) room temperature carrier concentration and carrier mobility varied with Pt content, temperature dependence of (c) Seebeck coefficient and (d) power factor of ZrNiSn and Zr0.5Hf0.5Ni1-xPtxSn |
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