图10. GOS陶瓷在不同条件下无压烧结后的微观结构[78]
Fig. 10. Microstructures of GOS ceramics prepared by pressureless sintering under different conditions[78] (a) 1380 ℃×6 h, 1.0 K/min; (b) 1300 ℃×3 h, 2.8 K/min