铜基底预处理对CVD法生长石墨烯薄膜的影响
孙付通1,2(
),冯爱虎2,陈兵兵2,于云2(),杨红1()
),冯爱虎2,陈兵兵2,于云2(),杨红1()
Effect of Copper Pretreatment on Growth of Graphene Films by Chemical Vapor Deposition
SUN Futong1,2(),FENG Aihu2,CHEN Bingbing2,YU Yun2(),YANG Hong1()
),FENG Aihu2,CHEN Bingbing2,YU Yun2(),YANG Hong1()
Fig. 3. OM images of copper substrates annealed at different temperatures for 30 min (a) 800 ℃; (b) 900 ℃; (c) 1000 ℃; (d) 1060 ℃
.
