Si/Porous-C | Nano-silicon powder | Pitch | 723.8 mAh/g (1st)600 mAh/g (100 mA/g, 100 )a | Spray drying + High-temperature pyrolysis | [35] |
Si@C@RGO | Silicon powder (80 nm) | Sucrose | 1599 mAh/g (1st)1517 mAh/g (100 mA/g, 100 ) | Spray drying + High-temperature pyrolysis | [36] |
Si/C/G | Silicon powder (325 mesh) | Phenol-formaldehyde resin (PFR) | 700 mAh/g (1st)550 mAh/g (100 mA/g, 40 ) | High-temperature pyrolysis | [37] |
Silicon-sponge | Si wafer (>20 μm) | Acetylene | 790 mAh/g (1st)726 mAh/g (100 mA/g, 300 ) | Electrochemical etching+ High-temperature pyrolysis | [38] |
PS@C | Si powder (5 μm) | Propylene | 1980 mAh/g (1st)1287 mAh/g (100 mA/g, 100) | Chemical etching + CVD | [39] |
Si/C | Al-Si alloy (2-10 μm) | Polyacrylonitrile (PAN) | 952 mAh/g (1st)826.3 mAh/g (200 mA/g, 300) | Chemical etching + High-temperature pyrolysis | [30] |