介质衬底上生长h-BN二维原子晶体的研究进展

张兴旺,高孟磊,孟军华

Research Progress of Direct Growth of Two-dimensional Hexagonal Boron Nitride on Dielectric Substrates

ZHANG Xing-Wang,GAO Meng-Lei,MENG Jun-Hua

图5 (a)RMS随V/III比例变化的关系图; (b)不做表面氮处理与氮处理10 min条件下, BN厚度随V/III比例变化的关系图(插图是V/III比例为2250时, BN厚度随生长时间变化的关系图); (c)蓝宝石衬底上h-BN的截面STEM照片及对应区域的衍射图; (d)Si₃N₄/Si衬底上h-BN的照片; (e)Si₃N₄/Si, SiO₂/Si和Si衬底上h-BN厚度与生长时间的关系图^{[30, 49-53]}

Fig. 5 (a) Plot of RMS determined by AFM vs. V/III; (b) Thickness vs. V/III for BN films grown on sapphire with and without the pre-growth nitridation process with insetshowing thickness vs. growth time for films grown using a V/III ratio of 2250; (c) Cross-sectional STEM image of h-BN grown on sapphire and diffraction patterns for selected areas I and II; (d) Camera view of h-BN on Si₃N₄/Si; (e) Variations of h-BN film thickness at different CVD growth times for Si₃N₄/Si, SiO₂/Si, and Si substrates^{[30, 49-53]}