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介质衬底上生长h-BN二维原子晶体的研究进展
张兴旺1,2,高孟磊1,2,孟军华1,2
Research Progress of Direct Growth of Two-dimensional Hexagonal Boron Nitride on Dielectric Substrates
ZHANG Xing-Wang1,2,GAO Meng-Lei1,2,MENG Jun-Hua1,2

图3. (a)PLD设备示意图以及热解石墨衬底上h-BN和蓝宝石衬底上a-BN的截面TEM照片[42]; (b)蓝宝石衬底上非晶BN薄膜的高分辨SEM照片[43]; (c)Si衬底上h-BN薄膜的截面TEM照片[44]; (d)Si衬底上h-BN层状结构的高分辨TEM照片[44];在 (e~f)1690 ℃下生长3 h, (e)蓝宝石衬底和(f)热解石墨衬底上h-BN的AFM图[45]

Fig. 3. (a) Schematic of PLD setup and the cross-sectional TEM image of h-BN on HOPG and a-BN on sapphire[42]; (b) High magnification SEM image of an amorphous BN film deposited on sapphire substrate[43]; (c) Cross-sectional TEM image of h-BN film on Si[44]; (d) High-magnification TEM image of the h-BN layered structure on Si[44]; (e-f) AFM images of h-BN grown on (e) sapphire and (f) HOPG for 3 h, 1690 ℃[45]