介质衬底上生长h-BN二维原子晶体的研究进展

张兴旺,高孟磊,孟军华

Research Progress of Direct Growth of Two-dimensional Hexagonal Boron Nitride on Dielectric Substrates

ZHANG Xing-Wang,GAO Meng-Lei,MENG Jun-Hua

图1 (a)SiO2衬底上生长20 min的h-BN的AFM图(插图为对应的傅里叶变换图像)[26]; (b)Si衬底上BN纳米片的SEM照片[27]; (c)在蓝宝石衬底上使用纳米晶石墨烯合成h-BN的示意图及其TEM、HRTEM照片[28]; (d)SiO2衬底和(e)石英衬底上h-BN的照片[29,30]; (f)蓝宝石衬底上h-BN的照片; (g)蓝宝石衬底上h-BN的低能电子衍射图; 沿不同方向生长的h-BN的HRTEM照片: (h)垂直于Al2O3(11ˉ20)方向, (i)平行于Al2O3(11ˉ20)方向[31]

Fig. 1 (a) AFM image of h-BN on SiO2 for 20 min with inset image showing the FFT data[26]; (b) SEM image of the BN sheets grown on Si[27]; (c) Synthesis of h-BN film on sapphire substrate using nc-G and corresponding cross-sectional TEM and HRTEM images[28]; Camera view of h-BN on (d) SiO2 and (e) quartz surface[29,30]; (f) Photograph of EM-h-BN on sapphire substrate; (g) LEED pattern of h-BN grown on sapphire substrate; HR-TEM images of multilayer h-BN grown (h) perpendicular to Al2O3 (11ˉ20) and (i) parallel to Al2O3 (11ˉ20)[31]