介质衬底上生长h-BN二维原子晶体的研究进展

张兴旺,高孟磊,孟军华

Research Progress of Direct Growth of Two-dimensional Hexagonal Boron Nitride on Dielectric Substrates

ZHANG Xing-Wang,GAO Meng-Lei,MENG Jun-Hua

表1 采用不同方法在介质衬底上制备h-BN二维晶体的优缺点

Table 1 Comparison of different methods for preparing 2D h-BN on dielectric substrates

Preparation method Advantages Disadvantages CVD Low equipment cost, suitable for preparing large area sample The complicated process, the interrelated growth parameters, many by-products MOVPE The cold wall reaction chamber which can prevent precursors from reacting on the inner wall Highly toxic precursors, high growth temperature (>1000 ℃) PLD, ALD and Magnetron sputtering Easy to control the process, the low growth temperature (250-700 ℃) The poor material quality, mostly amorphous MBE High material quality Expensive equipment and high growth temperature (>1300 ℃) Two-step method The lower growth temperature (500-1000 ℃), simple process, suitable for preparing large area and patterned sample Impurities are introduced during spin coating