基于Al2O3介质的Ga2O3 MOSFET器件制备研究

基于Al₂O₃介质的Ga₂O₃ MOSFET器件制备研究

吕元杰, 宋旭波, 何泽召, 谭鑫, 周幸叶, 王元刚, 顾国栋, 冯志红

Ga₂O₃ MOSFET Device with Al₂O₃ Gate Dielectric

Yuan-Jie LV, Xu-Bo SONG, Ze-Zhao HE, Xin TAN, Xing-Ye ZHOU, Yuan-Gang WANG, Guo-Dong GU, Zhi-Hong FENG

表1 Ga₂O₃MOSFET电学参数汇总

Table 1 Summary of electrical parameters for Ga₂O₃MOSFET

	Doping concentration/cm^-3	Carrier mobility/ (cm²•V^-1•s^-1)	Drain source saturation current/ (mA•mm^-1)	Breakdown voltage/V	Ref.
1	3.0×10¹⁷	NR	26	370	[4]
2	4.8×10¹⁷	19.7	60	200	[1]
3	3.0×10¹⁷	70-95	78	755	[9]
4	2.3×10¹⁷	24	0.24	612	[11]
5	4.0×10¹⁷	111	80	479	[5]
6	1.3×10¹⁸	96	150	NR	[15]
	3.0×10¹⁷	42			This work
	1.0×10¹⁸	20	108	23	This work