室温下制备非晶ZnO薄膜及其电阻开关特性研究
, 徐智谋, 武兴会, 刘斌昺 Deposition of Amorphous Zinc Oxide Thin Film at Room Temperature and Its Resistive Switching Characteristics
ZHANG Tao, XU Zhi-Mou, WU Xing-Hui, LIU Bin-Bing
, XU Zhi-Mou, WU Xing-Hui, LIU Bin-Bing Fig. 5 Resistance property of Ala-ZnOFTO a I-V curves; b I-V curves of the Ala-ZnOFTO device under negative bias voltage direction in the double logarithmic coordinatesthe number within the plot indicates the slope of I-V curve; c Distribution of threshold voltage of Ala-ZnOFTO device; d Retention properties of resistance state at room temperature; e Switching endurance characteristic under continued sweep cycles
