| 图2   室温下CTO-0, CTO-4, CTO-8, CTO-8Ar未扣除a和已扣除b顺磁部分后掺杂样品的磁化强度  M  随磁场  H 的变化 Fig. 2     M -  H  curves at room temperature of CTO-0, CTO-4, CTO-8, CTO-8Ar before a and after b deducted paramagnetic parts for doped samples.  The inset in a shows the  M-T curve from 5 to 305 K in a field of 2 kOe for sample CTO-8, where the solid curve represents the result fitted by Eq. 1 and the inset in b shows the partial hysteresis loops in low field
 
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