图2 室温下CTO-0, CTO-4, CTO-8, CTO-8Ar未扣除a和已扣除b顺磁部分后掺杂样品的磁化强度 M 随磁场 H 的变化 Fig. 2 M - H curves at room temperature of CTO-0, CTO-4, CTO-8, CTO-8Ar before a and after b deducted paramagnetic parts for doped samples. The inset in a shows the M-T curve from 5 to 305 K in a field of 2 kOe for sample CTO-8, where the solid curve represents the result fitted by Eq. 1 and the inset in b shows the partial hysteresis loops in low field |