PECVD下基底温度对SiC薄膜形态、成分及生长速度的影响
于方丽1,2, 白宇2, 秦毅2, 岳冬2, 罗才军2, 杨建锋2

Influence of Substrate Temperature on the Morphology, Composition and Growth Rate of SiC Films Deposited by PECVD
YU Fang-Li1,2, BAI YU2, QIN Yi2, YUE Dong2, LUO Cai-Jun2, YANG Jian-Feng2
图5 单晶Si100及多晶铜基底表面生长的SiC薄膜中Si与C原子百分含量
Fig. 5 Atomic content of Si and C atoms in SiC films on the surfaces of single crystal Si100 and polycrystalline Cu, a Si; b Cu