PECVD下基底温度对SiC薄膜形态、成分及生长速度的影响
于方丽1,2, 白宇2, 秦毅2, 岳冬2, 罗才军2, 杨建锋2

Influence of Substrate Temperature on the Morphology, Composition and Growth Rate of SiC Films Deposited by PECVD
YU Fang-Li1,2, BAI YU2, QIN Yi2, YUE Dong2, LUO Cai-Jun2, YANG Jian-Feng2
图4 单晶Si100表面生长薄膜XPS图谱
Fig. 4 XPS spectra of as-deposited films on the surface of single crystal Si100 a,b,c Si2p peak; d,e,f Cls peak