PECVD下基底温度对SiC薄膜形态、成分及生长速度的影响
于方丽1,2, 白宇2, 秦毅2, 岳冬2, 罗才军2, 杨建锋2

Influence of Substrate Temperature on the Morphology, Composition and Growth Rate of SiC Films Deposited by PECVD
YU Fang-Li1,2, BAI YU2, QIN Yi2, YUE Dong2, LUO Cai-Jun2, YANG Jian-Feng2
图3 不同基底温度下单晶Si 100及多晶铜表面沉积SiC薄膜的HRTEM照片
Fig. 3 HRTEM images of SiC films on the single crystal Si 100 and polycrystalline Cu substrates at different substrate temperature a Si substrate 60℃; b Si substrate 300℃; c Si substrate 500℃; d Cu substrate 60℃; e Cu substrate 300℃; f Cu substrate 500℃