PECVD下基底温度对SiC薄膜形态、成分及生长速度的影响
于方丽1,2, 白宇2, 秦毅2, 岳冬2, 罗才军2, 杨建锋2

Influence of Substrate Temperature on the Morphology, Composition and Growth Rate of SiC Films Deposited by PECVD
YU Fang-Li1,2, BAI YU2, QIN Yi2, YUE Dong2, LUO Cai-Jun2, YANG Jian-Feng2
图1 不同基底温度下单晶Si 100与多晶铜基底表面沉积薄膜的剖面SEM照片
Fig. 1 SEM images of deposited films on the single crystal Si 100 and polycrystalline Cu substrates at different substrate temperatures