Journal of Inorganic Materials ›› 2013, Vol. 28 ›› Issue (9): 982-986.doi: 10.3724/SP.J.1077.2013.12685

• Research Paper • Previous Articles     Next Articles

Preparation and Converse Magnetoelectric Effect of AlN/FeCoSiB Magnetoelectric Composite Films

TONG Bei, YANG Xiao-Fei, LIN Geng-Qi, CHEN Shi, OUYANG Jun   

  1. (School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, china)
  • Received:2012-11-12 Revised:2012-12-20 Online:2013-09-20 Published:2013-08-14
  • Contact: OUYANG Jun.
  • About author:TONG Bei. E-mail:
  • Supported by:

    National Natural Science Foundation of China (51172080)

Abstract: AlN/FeCoSiB magnetoelectric (ME) composite films were prepared by RF magnetron sputtering successfully. The influences of annealing on piezoelectric property of AlN film and magnetic property of FeCoSiB film were discussed. The converse magnetoelectric (CME) response was investigated in detail. The results demonstrate that after annealing at 500℃, the AlN film possesses the highly (002) preferred orientation and typical columnar microstructure. Pronounced magnetic field sensitivity of FeCoSiB film is improved greatly through annealing at 300℃. The CME coefficient (αCME) reaches the maximum of 62.5 A/(m·V) at the bias magnetic field (Hdc) of 875 A/m. In addition, the magnetic induction (B) has an excellent linear relationship to the driven AC voltage (Vac) (Linearity of 1.3%). These make the AlN/FeCoSiB ME composite films exhibit promising potential in magnetic and electric field detecting application.

Key words: RF magnetron sputtering, composite film, annealing, converse magnetoelectric

CLC Number: 

  • TQ174